| 摘要 |
PURPOSE:To increase the bit density per electrode by forming the impurity region on the semiconductor substrate through the ion injection and then forming the 1st and 2nd layer poly-crystal Si transfer electrodes by the self-alignment method on the impurity region via the insulator film. CONSTITUTION:SiO2 film 8 is coated on semiconductor substrate 7, and then Si3N4 film 9A and 9B are formed at the fixed areas. And patterns 10A-10C of the resist film are formed to cover film 8, 9A and 9B. Then region 11A and 11B featuring the same conducting type as substrate 7 and a high impurity density are formed by the ion injection and using patterns 10A-10C as the mask, and then patterns 10A-10C are removed to coat 1st layer poly-crystal Si transfer electrodes 12A-12C containing the opposite conducting impurity on the exposed substrate 7. After this, patterns 13A-13C of the resist film cover over electrodes 12A-12C, and region 14A and 14B of the same conducting type as substrate 7 are formed with the ion injection. Patterns 13A-13C are then removed, and SiO2 films 15A- 15C cover over poly- crystal layers 12A-12C. Then 2nd layer poly-crystal Si transfer electrodes 17A- 17C are coated on exposed substrate 7 via SiO2 film 16A and 16B. |
