| 摘要 |
PURPOSE:To decrease the number of the connection lines to the clock signal lines and thus to reduce the charge storage region area occupying on the substrate by limiting the number of electrodes which are connected to the channel regions of the shift register irrespective of the number of the charge storage regions within the channel. CONSTITUTION:Charge storage region Q11 of channel C1 of shift register R1 plus potential barrier part A11, Q13, A13, Q15, A15, Q17 and A17 are located under electrode E11 respectively. At the same time, charge storage region Q12 plus potential barrier part A12, Q14, A14, Q16 and A16 are positioned under electrode E12. In this case, these charge storage regions and potential barrier parts are arranged zigzag in the extending directions of electrode E11 and E12. The same relative positional relation is given to electrode E31 and E32 against potential barrier part A and charge storage region Q of channel C3 of shift register R3. Then electrodes E21-E26 are provided also between register R1 and R3, and then combined each other to be led out to clock signal lines L1-L4. |
