发明名称 PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve a leakage property and a close adhesion property of solder to improve reliability by heating a pellet over a solder melting temperature under pressure reduction for the purpose of removing bubbles of a mount part after the pellet is mounted on a stem through solder. CONSTITUTION:An Au layer is evaporated on the reverse face of Si substrate 1, and substrate 1 is heated over an Au-Si eutectic temperature to form Au-Si layer 3. Then, after substrate 1 is cooled, Au layer 4 is formed on layer 3 without breaking vacuum by evaporation, and a metallized layer is formed on the reverse face. Si substrate 1 obtained in this manner is divided into prescribed pellets. Meanwhile, the Au-Si solder foil formed on the formed Au layer is put on the mount pertinent part of a stem and is heated over an Au-Si eutectic temperature to pre-form solder layer 6. Then, the pellet above is put on this stem, and pressure is applied while heating in a non-oxidizable atmosphere to mount the pellet on the stem. As a result, no bubble exist in the mount part, and a good close adhesion property is obtained, so that a high-reliability device can be obtained.
申请公布号 JPS54113250(A) 申请公布日期 1979.09.04
申请号 JP19780019703 申请日期 1978.02.24
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 OGAWA AKIRA;NARUSE YOSHII
分类号 H01L21/52;H01L21/58 主分类号 H01L21/52
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