| 摘要 |
PURPOSE:To prevent a protective film from generating cracks by providing a groove, which reaches a dielectric layer along the bump circumference through a ground protective film, and giving a structure where this groove is buried around the bump. CONSTITUTION:Dielectric layer 2 such as SiO2 and Si3N4 is provided on semiconductor substrate 1 formed by Si, and electrode pad 3 formed by Al, etc., is separated from substrate 1 by dielectric layer 2 and has one end connected to the wiring on the semiconductor element. Further, protective film 4 for the dielectric layer is formed on dielectric layer 2 and the circumference of electrode pad 3. Here, groove 8 is provided which reaches dielectric layer 2 through protective film 4 surrounding the circumference of electrode pad 3, and bump 4 is so formed that the circumference of bump 4 or the part near the circumference of bump 4 may be agreed with groove 8. As a result, the stress from bump 6 is absorbed by groove 8 and acts on dielectric layer 2 and does not act on protective film 4. Consequently, coverage part 4a of protective film 4 is prevented from generating cracks, and the lowering of reliability can be prevented. |
