| 摘要 |
<p>PURPOSE:To increase the light emitting efficiency, by cutting off the upper part layer of solution by about 1/2 to 3/4 and by adding the impurity for light emission center with the condition in which the slider and the solution upper surface are apart from each other, in the liquid phase epitaxial growing of III to V group. CONSTITUTION:The solution 14 is contained in the package 19, the semiconductor substrate 12 is placed on the concave 13, the hole 17 of the spacer 16 is maved on the substrate. The slider 18 is shifted and the through-hole 20 is moved to the hole 17. In this case, a part of the solution, 14a, is placed on the substrate with a uniform thickness (3 to 5,5mm). In this case, although the impurity undesirable is diffused in the solution, the diffusion speed of the n type inpurity in the substrate 12 cools the solution gradually in the slightly faster diffusion speed than the diffusion speed, forming the first n layer. Next, the spacer is moved, cutting off the upper layer of the solution. When it is put in the solution pool 15 and returned on the substrate again, the residual liquid 14a is reduced in 1/4 to 1/2 thickness. With this condition, the impurity for light emission center is added from the gas hole 20, n layer is formed with temperature decreased, p type impurity is added with constant temperature, and pn inversion is made by adding p type impurity, p layer is made with temperature reduction.</p> |
