| 摘要 |
<p>PURPOSE:To simplify the reading circuit of a memory matrix and to attain data reading at a high speed by selecting the row of a word line with a row selecting signal and the column of a source line with a column selecting signal respectively. CONSTITUTION:Either the row of a word line 11a or 11b is selected by the row selecting signal from a row decoder 60 and any one column of source lines 12a-12f, 14, 16a-16f is selected by the column selecting signal from a column decoder 62. Thus, any one semiconductor memory element of a memory matrix 10 is selected. For data lines 13a-13f, 17a-17f connected to an element to be selected, a constant voltage is impressed by a constant voltage impressing means 50 which is connected through common data lines 42 and 44. Then, a current to flow from this data line through the selected memory element to the source line is detected by a current detecting means 40. After that, according to the size of this detected current, the data of the selected memory element are read.</p> |
