| 摘要 |
PURPOSE:To obtain a semiconductor featuring a high degree of integration by providing a layer of a higher density than the substrate and touching partially one of the source and the drain through the self-matching and furthermore giving the self-matching to the floating gate electrode to part of the control electrode. CONSTITUTION:The lamination of SiO2 3, poly Si4 and Si3N4 5 is given selectively on p-type Si substrate 1 to form oxide film 6. Then film 5 is removed with SiO2 7 coated to form poly Si gate 8 selectively. Film 7, 4 and 3 are etched, and the B-ion is injected selectively to provide P<+>-layer 10 to film 4 and 8 through the self- matching. Then the phosphorus is diffused to form N<+>-layer 11 and 12 to film 4 and 8 plus layer 10 through the self-matching, and then SiO2 13 containing the phosphorus is coated with the opening drilled selectively to film 13 to form Al electrods 18-20. In such way, the form of floating gate electrode 4 is decided by control gate electrode 8 along the aa' direction and by the field insulator film part along the bb' direction each, thus ensuring the minimum necessary size as well as the maximum degree of integration. |
