| 摘要 |
PURPOSE:To establish the Schottky barrier diode of heat proof type, by preventing ill effect of the progress toward transversal direction of Al, Si alloy, in using (111) crystal. CONSTITUTION:The P type base 12 is formed on the N type Si (111) plane, the electrode window 13a is provided for the thermal oxide film 13, and the Al wiring is extended at 14a on the film 13. Al makes the burrier layer 1 of alloy with Si through the window 13a. Since the layer 15 progresses in parallel with the major plane traversally, if the allowance d1 of the pattern with the window and the layer 12 is sufficiently provided, the alloy layer 15 is not reached to the pn junction. Since this progress toward the direction 14 a in which Al wiring resides, the allowance d2 is more greater. With this construction, the alloy layer is extended at high temperature processing at packaging, thereby avoiding the leakage between the base and emitter or collector. |
