| 摘要 |
PURPOSE:To reduce a unit in area without causing variation in the diffusion of impurity in several processes, by forming a source region in the last process of manufacture paying attention to that a part contributing to the reduction in the element side is the surface source region. CONSTITUTION:Inside of P<+>-type Si substrate 11, drain region 14 composed of N<+>-type region 14'' and N-type region 14' is formed and P<+>-type base region 13 extending from one part of its surface part to substrate 11 and N<+>-type contact region 19 away from it are formed respectively by diffusion. Next, N<+>-type source region 12, formed inside of region 13 by diffusion, is positioned on the surface of the substrate. Inside of region 12, V-shaped groove 20 is made with its bottom part protruded slightly from region 13, poly-crystal Si layer 12 forming charge storage capacity is provided onto region 12, and SiO2 film 15 is adhered onto the entire surface containing it. Next, an opening is made in film 15, and Al gate electrode 17 and Al drain region 18 are fitted into groove 20 and region 19 respectively. |
