发明名称 VACUUM DEPOSITING METHOD FOR SILICON
摘要 PURPOSE:To reduce time for deposition and to prevent explosion of molten silicon balls in vacuum deposition, by use of a vessel made of carbonaceous material as the vessel for silicon vacuum deposition by electron beam evaporation method. CONSTITUTION:Silicon 8 is placed on a vessel 12 made of carbonaceous material or graphite, or alumina mixed with not less than 50 % carbonaceous material powder, and is struck with electron beam 5 to effect silicon evaporation.
申请公布号 JPS54107884(A) 申请公布日期 1979.08.24
申请号 JP19780014893 申请日期 1978.02.14
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 INOUE KATSUYUKI
分类号 C23C14/06;C23C14/14;C23C14/24;C23C14/30 主分类号 C23C14/06
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