| 摘要 |
PURPOSE:To manufacture stable device against temperature rise, by providing Au layer on Pt layer on GaAs via Mo and by avoiding the deterioration in Schottky barrier. CONSTITUTION:By providing Mo layer 7 between Pt layer 3 and Au layer 5, the external diffusion of Ga and As in the GaAs operation region and the internal diffusion of Au layer are prevented, and mutual interferrence of the layers 5,3,2 are limited. With this constitution, the Pt Schottky barrier type GaAs impad diode can be obtained, which is stable to the temperature rise. |
