| 摘要 |
A method of manufacture of a zener diode with a given breakdown voltage is disclosed wherein the resistivity of the initial wafer is measured before diffusion of a junction in the wafer, and a diffusion operation is then performed to diffuse the junction at a fixed diffusion temperature and for a time which is determined such that the desired breakdown voltage is proportional to the product of the square root of the initial resistivity and the fourth root of the diffusion time. |
