| 摘要 |
A device, which could quickly response to a change in a HF magnetic field, was composed of a hole element(1)(I) and IC comprising an IGFET for amplifying an output voltage of I. The ratio, X/L of terminals (h1,h2) position X or I to channel length L of I, was selected to obtain a bias voltage, so that the amplifier could operate without the amplifier cct. influencing I. The magnetic field-dependence of the output voltage of I was linear compared with conventional current amplification methods.
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