| 摘要 |
PURPOSE:To enable to output the light of at least two wave lengths from common emission outlet, from one semiconductor light emitting element. CONSTITUTION:On the n type GaAs substrate 11, the n type GaAs layer 12, p type Al0.3Ga0.7As layer 13, and n type Al0.3Ga0.7As layer 14 are formed. After masking a part of the surface of the layer 14, a part of the layer 13 is exposed with etching. Next, the mask at the surface of the layer 14 is removed, and metal evaportion film is formed on the surface exposing the layers 13 and 14, and the metal film on the photo emitting outlet 20 is removed with etching by masking on a part of it. Further, the electrode metal film 17 to the layer 14 is made to the electrode metal film 16 by removing a part of the metal film on the layer 13. Further, when the voltage signals v1(t) and v2(t) are fed to the electrodes 15 and 17, light can be emitted from the light emitting sections 18 and 19. |
