| 摘要 |
PURPOSE:To obtain a LED where pulse response characteristic is improved without damaging light emission efficiency and the linearity of current light output characteristic is superior, in the surface luminous-type diode which has the light emission region limited. CONSTITUTION:n-AlxGa1-xAs layer 11, n-AlzGa1-zAs layer 12' of a light emission layer, n-AlxGa1-xAs layer 13' and n-AlyGa1-yAs layer 14 are successively grown in crystal on n-GaAs substrate 40 by epitaxial growth method. For the puspose of obtaining a prescribed light emission path at the center from the bottom of layer 14, p-type impurity is selectively diffused to provide region 15 and form p-type electrode 17 through insulating film 19. Meanwhile, n-type electrode 16 is formed on the upper face of n-GaAs substrate 40 which is left by selective etching. |
