| 摘要 |
PURPOSE:To obtain a semiconductor element which has a good characteristic with a small leak current and is integrated at a high density, for example, a N channel- type Si gate MOSFET with the good rate of indefectible elements. CONSTITUTION:Oxide Si layer 202, gate insulating layer 203, gate electrode 204 and wiring layer 205 are formed on the surface of p-type Si substance 201. Next, arsenic is ion-injected to form source and drain diffusion layers 206 and 207. Next, windows 208 and 209 are formed, and phosphorus is diffused in a high temperature, thereby forming N-type diffusion regions 210 and 211. |
