| 发明名称 |
PROCESS OF NEUTRALIZING THE POSITIVE CHARGES IN THE INSULATING GATE OF AT LEAST ONE FIELD-EFFECT TRANSISTOR WITH INSULATED GATE |
| 摘要 |
<p>Positive charges that appear in the gate silicon oxide insulation of a silicon insulated gate field-effect transistor device may be controlled through neutralization by injecting electrons in to the gate oxide from the substrate after the device is complete and metallized by irradiating the back of the substrate with light in the presence of a voltage bias.</p> |
| 申请公布号 |
EP0002421(A3) |
申请公布日期 |
1979.08.22 |
| 申请号 |
EP19780430013 |
申请日期 |
1978.10.04 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NING TAK, HUNG;OSBURN, CARLTON MORRIS;YU HWA, NIEN |
| 分类号 |
H01L29/78;H01L21/26;H01L21/265;H01L21/268;H01L21/3105;H01L21/336;(IPC1-7):01L21/326 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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