| 摘要 |
PURPOSE:To accurately evaluate an optical output characteristic of a light-emitting element on a wafer by a method wherein an optical output face and an optical reflection face are formed on the wafer so as to be faced by utilizing an end face of an element region. CONSTITUTION:A semiconductor substrate 10 and a P-side ohmic electrode 60 are brought into contact only in a contact region 50; this region is separated from the semiconductor substrate 10 in a peripheral part by using grooves 30 which are deeper than a p-n junction region 20. Since an element isolation region 90 is formed in the P-side ohmic electrode 60, light-emitting elements are separated electrically inside a wafer. Accordingly, when an N-side electrode is taken out from the whole surface of an N-side ohmic electrode 70 and an electric current flows to a gold-plated layer 80 on the P-side ohmic electrode 60 of the individual light-emitting elements, a beam is radiated through a silicon nitride film 40 from an optical output face 100; this beam is reflected by an optical reflection face 110 at an end part of an adjacent element facing the optical output face 100; the beam is taken out in a vertically upward direction; accordingly, a photodetector is arranged in parallel with a wafer face. Thereby, it is possible to accurately evaluate an optical output characteristic of the light-emitting elements on the wafer. |
