发明名称 |
D.C. STABLE SEMICONDUCTOR MEMORY CELL |
摘要 |
<p>D.C. STABLE SEMICONDUCTOR MEMORY CELL Disclosed is a field effect transistor (FET) memory array in which each of the cells forming the array comprises four FET's . The first and second of the four FET devices are cross-coupled while the third and fourth FET devices form loads for the cross coupled pair. D.C. stability is achieved by conditioning the load FET devices into partial conduction during the stand-by state of the memory cell.</p> |
申请公布号 |
CA1060994(A) |
申请公布日期 |
1979.08.21 |
申请号 |
CA19750237271 |
申请日期 |
1975.10.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ASKIN, HALUK O.;JACOBSON, EDWARD C.;LEE, JAMES M.;SONODA, GEORGE |
分类号 |
G11C7/02;G11C11/24;G11C11/40;(IPC1-7):11C7/02;11C11/24;11C11/40 |
主分类号 |
G11C7/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|