发明名称 MANUFACTURE FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To selectively remove glass particles, by washing the glass with surface active agent after attaching the glass with electrodeposition. CONSTITUTION:The thermal oxidation film 2 on the Si substrate 1 is photo-etched, and the glass 3 is selectively made electrode-position. Next, cleaning is made by using water solution or solution of surface active agent, and the glass particles 4 on the film 2 are removed and dried. Thus, only the particles 4 on the film 4 can be removed and the deficiency of photoetching after the formation of glass film can be reduced.
申请公布号 JPS54104775(A) 申请公布日期 1979.08.17
申请号 JP19780011177 申请日期 1978.02.03
申请人 FUJI ELECTRIC CO LTD 发明人 IWAKI TETSUO;KONUMA TAKAYUKI;KITAMURA AKIHIKO;KUNIHARA KENJI
分类号 G03F1/00;G03F1/82;H01L21/302;H01L21/304 主分类号 G03F1/00
代理机构 代理人
主权项
地址