| 摘要 |
PURPOSE:To easily and safely detect the junction defection, by breaking down the semiconductor element with electromagnetic waves such as infrared rays radiated. CONSTITUTION:The electromagnetic waves 6 are radiated on the element 1, the DC power supply 8 is connected between the emitter E and the collector C via the resistor 7, and the leakage current produced is detected with the voltage change across the resistor 7. The constant voltage source 9 and the resistor 10 are connected through the utilization of diode characteristics of forward direction for the base B and the collector C. When the electromagnetic energy is greater than the forbidden band width, the element is simply broken down and the leakage current flows to the resistor 7, the amplification factor characteristics between E and C is discriminated, and the propriety of bonding can be detected. With this method, high voltage application is unnecessary and the discrimination can quickly be made. |
