| 摘要 |
PURPOSE:To increase the effective using efficiency of the charge particle beam by applying the amplitude modulation to one voltage among the rectangular wave deflecting voltage to be applied to the deflecting electrodes of the X and Y axis and then drawing the circular resurge pattern at the beam irradiation part. CONSTITUTION:Ion beam 1 is deflected to both the X and Y axis directions to secure the uniform ion injection to semiconductor substrate 7. In other words, deflecting voltage 4 and 5 of the rectangular wave are applied to these electrodes, and the resurge pattern is drawn at beam irradiation part 6 through slit 8. In such constitution, the amplitude modulation is applied to one of the rectangular wave deflecting voltage to secure drawing of the circular resurge pattern within part 6. Thus, the highly effective beam irradiation is ensured also for the circular semiconductor substrate 7, increasing the using efficiency for the charge particle beam. |
