HALVLEDARANORDNING FOR LAGRING OCH LESNING AV INFORMATION

摘要

A high packing density is obtained in a memory by stacking the capacitors of adjacent columns in such a manner that two capacitors of different columns are formed by three conductive layers situated one above the other. The central layer can be connected to a reference voltage, while the uppermost layer is connected to a transistor in one column and lowermost layer is connected to a transistor in the other column.