| 摘要 |
PURPOSE:To facilitate the detection for the emitter-base short circuit or the emitter opening of the transistor by irradiating the electromagnetic wave to the element when the wire bonding is given to the semiconductor element and utilizing the photoelectric effect caused by the wire bonding. CONSTITUTION:The substrate of transistor 1 which contains base region B and emitter region E to be the collector later is welded onto heat sink 5. Then wire 3 extended from spool 11 is bonded to electrode draw-out layer 9 via capillary 12, and resistance 4 and test voltage generator circuit 13 between wire 3 and heat sink 5 touching the collector. Furthermore, signal process circuit 15 is connected to quality decision circuit 16. While the bonding is being given in such a way, the infrared rays are irradiated to base B and emitter E. And the electromotive force generated through the PN junction at one tip P of resistor 14 is detected to decide the quality of the element. |
