| 摘要 |
PURPOSE:To form an inexpensive sense amplifier of high sensitivity and to utilize it with one transistor memory effectively, by adding a pre-charge level to potentials of two external input storage capacitors connected to an output point. CONSTITUTION:Even if switching transistors ST1e and S2e constituting a FF are supposed to vary in threshold level in the sense amplifier of a memory circuit, it is made possible to supply automatically a pre-charge level, correcting the dispersion in threshold level, to digit lines DL1e and DL2e, and external input storage capacitors of memory cells MC1e and MC2e, and dummy cells VS1e and VS2e, so that the sense amplifier can be made high in sensitivity regardless of threshold levels of ST1e and ST2e. Further, although the sufficient effect can be obtained only by pre-charging DL1e and DL2e, the higher sensitivity can be obtained since a pre-charge is added to capacitors of memory cells and dummy cells. |
