| 发明名称 |
FORMATION OF LIQUIDDPHASE EPITAXIAL GROWN LAYER |
| 摘要 |
<p>PURPOSE:To form well a liquid-phase epitaxial grown layer consisting of InP without meltback, by making the main face of a semiconductor substrate of In1-xGax AsyP1-y in the formation method of the liquid-phase epitaxial grown layer. CONSTITUTION:Liquid-phase epitaxial grown layer 12 consisting of In1-xGaxAsy P1-y is formed on semiconductor substrate main body 11 consisting of InP, and groove 14 is provided on upper face 13 of layer 12. Semiconductor substrate 10 produced in this manner is arranged in an inactive gas atmosphere to form liquid- phase epitaxial grown layer 15 consisting of InP on the surface of substrate 10.</p> |
| 申请公布号 |
JPS54101664(A) |
申请公布日期 |
1979.08.10 |
| 申请号 |
JP19780008147 |
申请日期 |
1978.01.27 |
| 申请人 |
NIPPON TELEGRAPH & TELEPHONE |
发明人 |
TAKAHASHI SHINICHI;KOBAYASHI TAKESHI |
| 分类号 |
C30B19/00;C30B19/12;C30B29/40;H01L21/208;H01L33/30 |
主分类号 |
C30B19/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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