| 摘要 |
PURPOSE:To form the bipolar element such as lateral type transistors for the polysilicon layer, by using the selective diffusion method in CMOS as it is. CONSTITUTION:MOSFET of different channel is respectively formed at the substrate region and the well region by forming the well 4 on the silicon semiconductor substrate 1, the polysilicon layer 6 is formed via the insulation film 5 on the substrate, and the hybrid type IC having the lateral type pn junction semiconductor element is formed on the layer 6 by utilizing the diffuion process to form MOSFET on this layer 6. |
