| 摘要 |
PURPOSE:To establish the high output logic circuit which can obtain high output level without increasing the manufacturing process and power consumption. CONSTITUTION:The circuit consists of the depletion type MISFET Q1 connecting the gate and the source and the depletion type MISFET Q2 connecting the gate and the drain provided in parallel with Q1, and the W/L ratio is set to Q1 so that it is turned on under the high power supply voltage showing substrate effect as load means and the enhancement MISFET Q3 is taken as drive means. |
