| 摘要 |
A Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) is described wherein a body of semiconductor material is provided with source, drain and channel regions and a gate structure located over the interstitial channel portion of the semiconductor body, between the source and drain regions. A stepped or dual thickness oxide layer, having one portion of minimum thickness formed over only a portion of the channel region and another portion of maximum thickness formed over the remaining portion of the channel region. This stepped oxide layer, together with the gate electrode, forms the gate structure. That portion of the channel region covered by the portion of minimum thickness oxide is separated from the drain region, and the portion of maximum thickness oxide is also located over both a portion of the drain region and that portion of the channel region adjacent the drain region. |
