发明名称 PHOTO COMPOSITE SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To improve a photo transfer rate with the distance between two elements shortened, and also to eliminate a risk that electrode parts touch each other, by adhering both main surfaces of a luminous semiconductor element and photo detection semiconductor elements, adhered to a thin insulating plate, via the thin insulating piece. CONSTITUTION:External electrode 9 is connected to electrode 12 provided to photo detection semiconductor element 2 and while element 2 is buried in the opening provided into film carrier 7, electrode 9 and carrier 7 are adhered together. As for luminous semiconductor element 6, external electrode 10 is adhered to electrode 13 and then adhered to film carrier 8 in the same way. The electrode sides of elements 2 and 6 constituted as mentioned above are confronted each other and fixed with thin insulating and photo transmissive piece 11 of Teflon or the like interposed between the both. Then, this device is shaped by using transparent epoxy resin 4 and sealed entirely with opaque epoxy resin 5.</p>
申请公布号 JPS5497389(A) 申请公布日期 1979.08.01
申请号 JP19780004924 申请日期 1978.01.19
申请人 NIPPON ELECTRIC CO 发明人 AGATA YOSHIO
分类号 H01L31/12 主分类号 H01L31/12
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