| 摘要 |
A memory element structure for a computer, was composed of 1st insulator(12) contacted with the semiconductor(11) surface, and 2nd insulator(13) combined to form joint regions(12.5) with the 1st insulator. The surface metallic impurity concentration of 1 x 1014 to 2 x 1015 no. of atom/cm2 was distributed to the joint regions so that electron charges remained in the joint regions.
|
