| 摘要 |
The base of a semiconductor device was composed of two buried layers, high and low impurity concn. layer. The high impurity concn. layer was located between the collector and emitter regions, so that the semiconductor device had a buried layer structure functioning as a linear integrated cct. The low impurity concn. layer was deposited by epitaxial growth. Thus, the base had two portions, one functioning as the base current path, and another accepting an injection of current carrier from the emitter.
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