| 摘要 |
<p>PURPOSE:To form a thermal head using a thin film heating resistor which is hard to be oxidized and is stable in resistance value by using the layer wherein two or more kinds of metals and boron are mingled in atomic scale as the heating resistor of the thermal head. CONSTITUTION:In the thermal head formed by laminating a thin film heating resistor 2, an electric conductor 3 supplying electric power to the resistor 2 and a protecting layer composed of silicon oxide or magnesium oxide, etc. on an insulation type substrate 1 such as ceramics, the abovementioned resistor 2 is formed of two or more kinds of metals such as Ti, Zr, Hf and boron. Namely, powder of two or more kinds of the abovementioned metals and boron is pressed over about 100 kg/cm<2> to make a tablet and with this as a vapor source, it is electron-beam evaporated on the substrate heated to about 200 to 500 deg.C in a high vacuum above about 1 X 10<-4> torr, whereby the thin film heating resistor 2 is formed. Similarly, forming the resistor 2 by using a sputtering method in an argon atmosphere of about 1 X 10<-3> to 5 X 10<-1> torr will give equally good results.</p> |
