发明名称 |
SELECTIVELY DOPING A SILICON BODY WITH ALUMINIUM |
摘要 |
A method of selectively doping a semiconductor body with aluminum impurities comprises the step of forming a layer of silicon dioxide which is thick enough so that during the diffusion a masking portion of aluminum oxide is formed therein. The aluminum oxide formed serves as a mask against the penetration of aluminum impurities through the remaining silicon dioxide therebelow. |
申请公布号 |
AU502461(B2) |
申请公布日期 |
1979.07.26 |
申请号 |
AU19770028173 |
申请日期 |
1977.08.24 |
申请人 |
RCA CORP. |
发明人 |
W. ROSNOWSKI |
分类号 |
H01L21/22;H01L21/223;H01L21/316;(IPC1-7):01L21/223;01L21/316 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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