发明名称 Surface métallique de contact d'un composant semiconducteur
摘要 <p>The method of applying a metallic contact strip to a semiconductor and the strip per se. The contact strip consists of three sequential layers of different metals stacked upon each other. The lowest layer, i.e., that adjacent the semiconductor, possesses a high affinity toward oxygen and is preferably selected from molybdenum, tungsten, vanadium and chromium. The middle layer is selected from iron, cobalt, nickel, manganese and chromium. The outer layer is a noble metal.</p>
申请公布号 FR1515415(A) 申请公布日期 1968.03.01
申请号 FR19670099135 申请日期 1967.03.16
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人
分类号 C23C14/18;H01L21/00;H01L21/60 主分类号 C23C14/18
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