| 摘要 |
PURPOSE:To perform the positioning between a mask and a wafer with a high presion by providing an optical system mask alignment pattern irradation different from an optical system for wafer alignment pattern irradiation in a projection-system mask alignment unit. CONSTITUTION:The exposing light from an exposing light source is irradiated to mask 1 through condenser lens 4, and mask pattern 5 of mask 1 is transferred onto a wafer pellet as a wafer pattern through a projection lens by projection exposure. In mask 1, mask alignment pattern 7 which performs the posistioning between mask 1 and the wafer is provided, and mercury-arc lamp 40, iris 41, lens 42, mirror 11 and object lens 18 are arranged. |
