| 摘要 |
PURPOSE:To increase the scale of integration of elements and increase current capacity by reducing electrode areas for wiring by the use of conductive film body. CONSTITUTION:The surface of a conductive film body 20 except its bonding portions 211-4 is insulation-treated. U-from through-holes 221-4 are provided on the 3 sides of the circumference of the bonding parts 211-4. Electrode metals 261-4 for wiring are formed in respectively opposing positions on the bonding parts 21 of the film 20 on the surface of a semiconductor substrate 25, whereby separate electrodes for wiring are provided. The electrodes 26 of the substrate are bonded to the portions 21 of the film and the through-holes 22 are used for alignment. Since these make resistance lower than gold wires, reduce the voltage drop of the film and cause the film to bonded to the electrodes 26 flatly, the voltage drop of the bonded faces reduces, and current supply equivalent to that of ordinary ones is feasible despite narrow areas of the electrodes 26 for wiring, thus the scale of integration of the element may be increased. |
