发明名称 |
Tunnel injection of minority carriers in semi-conductors |
摘要 |
Disclosed are multi-layer thin-film devices having adjacent insulator-semiconductor layers employing n-or-p-type semiconductors wherein a charge maintained at the insulator-semiconductor interface creates a depletion region that substantially suppresses tunneling of majority carriers while enhancing tunneling of minority carriers. When employed in a metal-insulator semiconductor (MIS) device wherein the semiconductor is a compound such as gallium arsenide (GaAs) or Cadmium Sulfide (CdS) such minority carrier injection substantially increases the luminescence efficiency.
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申请公布号 |
US4161814(A) |
申请公布日期 |
1979.07.24 |
申请号 |
US19770846490 |
申请日期 |
1977.10.28 |
申请人 |
CORNELL RESEARCH FOUNDATION INC |
发明人 |
BALLANTYNE, JOSEPH M |
分类号 |
H01L45/00;(IPC1-7):B01J17/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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