发明名称 |
Microwave power limiter comprising a single-gate FET |
摘要 |
A microwave power limiter for generating an output RF signal of substantially constant power level in response to an input RF signal of varying power level comprises a single gate field effect transistor (FET). The FET is biased such that the RF power output variation is small compared to the input power variation in the saturation region. A number of FET cascaded stages may be utilized to reduce this power output variation. A small signal amplifier including a number of FET cascaded stages may be employed in the limiter to increase the power level to that gain or drive level compatible with the saturated FET stages.
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申请公布号 |
US4162412(A) |
申请公布日期 |
1979.07.24 |
申请号 |
US19770838656 |
申请日期 |
1977.10.03 |
申请人 |
RCA CORP |
发明人 |
MAWHINNEY, DANIEL D;ROSEN, ARYE;TURSKI, ZYGMOND;WOLKSTEIN, HERBERT J |
分类号 |
H03G11/00;(IPC1-7):H03G11/04;H04B3/04 |
主分类号 |
H03G11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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