| 发明名称 |
Method for forming floating gate semiconductor device by selective ion-implantation |
| 摘要 |
A semiconductor device for use as a non-volatile semiconductor memory is provided with a floating gate formed by ion implantation.
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| 申请公布号 |
US4162176(A) |
申请公布日期 |
1979.07.24 |
| 申请号 |
US19760715767 |
申请日期 |
1976.08.19 |
| 申请人 |
SUWA SEIKOSHA K K |
发明人 |
TSUDA, AKIHITO |
| 分类号 |
H01L21/8247;H01L21/28;H01L29/49;H01L29/788;H01L29/792;(IPC1-7):H01L21/26;B01J17/00;H01L21/32 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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| 主权项 |
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