| 摘要 |
PURPOSE:To enable to arbitrarily increase the radius of curvature on the light emitting plane of lens shape, by inserting the GaAs layer between Ga1-xAlxAs layers grown on the GaAs substrate and the GaAs substrate forming the curved surface with epitaxial growing. CONSTITUTION:The hole 21A of lens shape is formed on the GaAs substrate 21 with conventional photolithography, and the GaAs layer 22 is grown with liquid phase epitaxial growing method etc. With this process, the hole 21A is burried with the layer 22, and the radius of curvature of the hole produced on the growing surface of the layer 22 is increased in proportional with the hole 21A as the growing progresses, and the growing of the layer 22 is stopped with desired radius of curvature. Succeedingly, the Ga1-xAlxAs layer 23 is grown into desired thickness, and the substrate 21 and the layer 22 are removed by immersing it into NH4OH-H2O2 system etching solution, for example. Thus, the Ga1-xAlxAs layer 23 having the desired radius of curvature and of lens shaped emission surface 23, that is, LED can be obtained. |
