发明名称 |
Floating gate solid-state storage device |
摘要 |
A floating gate semiconductor device is described wherein the floating gate member does not extend completely across the channel region and thus avoids alignment with the edges of the source and drain regions. The lateral displacement of the edge of the floating gate from the drain region permits stored charge on the drain to be undisturbed in the event avalanche breakdown occurs at the channel-drain junction.
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申请公布号 |
US4162504(A) |
申请公布日期 |
1979.07.24 |
申请号 |
US19770864766 |
申请日期 |
1977.12.27 |
申请人 |
RCA CORP |
发明人 |
HSU, SHENG T |
分类号 |
H01L21/8247;G11C16/04;H01L29/788;H01L29/792;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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