| 摘要 |
<p>PURPOSE:To provide a heat sensitive recording head of not requiring any isolating diodes by forming matrix-connected heating resistors and specified transistors, etc. for driving these on the specified crystal layer epitaxially grown on a specified substrate. CONSTITUTION:When the silicon crystal layer epitaxially grown on a sapphire insulation substrate is subjected to vapor deposition, etching and impurity diffusion teratment, then the heat sensitive recording head formed with row driving multicollector transistors Q1, Q2..., column driving transistors T1, T2..., row group heating resistors R11 and R12 and ..., R21 and R22 and ..., ... and connecting wires matrix- coupling these resistors is formed. with this head, rverese current is prevented by the multicollector transistors and the need for isolating diodes for preventing reverse current is eliminated.</p> |
