Planar bipolar semiconductor device - with depletion zone extending to surface on applying voltage in reverse direction (BE 18.7.79)

摘要

A planar bipolar high-tension semiconductor device has such a low impurity concn., and thickness of a first zone that the application of a voltage in the reverse direct ion between the first and second zone causes the depletion zone between the contact area and third zone to extend from the first pn-junction upward of the surface. This applies to a voltage which is lower than the breakdown voltage of the second pn-junction. The breakdown voltage of the collector-base junction is now not reduced by the field distribution at the surface. The device can remain entirely planar because no complicated passivation means are used, so that it is suitable for monolithic integrated circuits.