Solenoid magnetic field semiconductor detector - has magneto-diode with one surface contacting Schottky diode which is inversely polarised

摘要

The integral Schottky diode and magneto-diode combination provides a high voltage output for very low alternating or direct magnetic fields. The combination is built up on a sapphire or monocrystalline alumina substrate (2). This is overlaid by a thin silicon dioxide layer (3). The central region (3a) of this layer is thinned to about 15 to 30 angstroms and carries a small Schottky diode electrode (1) forming a surface barrier Schottky diode. P and N carrier injection regions (C1, C2) define the silicon dioxide region and have soldered metal electrodes (4, 5) allowing direct polarisation of the magneto-diode. The Schottky diode is reversed polarised.