| 摘要 |
PURPOSE:To form a desirable pattern by lifting off a photo resist mask after providing metal layers, whose uppermost layers are gold, to both surfaces of a substrate with the photo resist mask left on one surface at the same time. CONSTITUTION:An opening is made in oxidized film 2 of substrate 1 and Al wiring 3 and oxidized film 4 are stacked. After film 4 is etched in a HF+NH4F solution by using resist mask 5, films of Ti-Pt-Au 6 to 8 and 6' to 8' are adhered to both surfaces of the device. Next, the substrate is dipped in trichloroethylene and high-pressure water is blown to remove mask 5 and metal layers 6 to 8. Lastly, sintering is done for thirty minutes in N2 gas at 300 deg.C after washing in an organic solvent. Consequently, connections and mounting are attained excellently and no Al exposure part resides, so that the damp resistance will improve. |
