摘要 |
PURPOSE:To realize the programmable logic circuit high in the reliability, by adding readout transistor to FF constituted with n channel MOSFET pair through taking two fuses as loads. CONSTITUTION:The readout transistor Tr9,10 are added to FF taking fuses 7 and 8 as loads and constituted with n channel MOSFET's 5 and 6. Thus, the information can be stored in RAM memorizing it without non-volatile operation, then the check of the content of information can sufficiently be made, and the programmable logic circuit having high reliability can be realized, which can store the information once writtern in semi-permanently. |