发明名称 SEMICONDUCTOR MEMORY CIRCUIT
摘要 PURPOSE:To realize the programmable logic circuit high in the reliability, by adding readout transistor to FF constituted with n channel MOSFET pair through taking two fuses as loads. CONSTITUTION:The readout transistor Tr9,10 are added to FF taking fuses 7 and 8 as loads and constituted with n channel MOSFET's 5 and 6. Thus, the information can be stored in RAM memorizing it without non-volatile operation, then the check of the content of information can sufficiently be made, and the programmable logic circuit having high reliability can be realized, which can store the information once writtern in semi-permanently.
申请公布号 JPS5490937(A) 申请公布日期 1979.07.19
申请号 JP19770160838 申请日期 1977.12.27
申请人 SEIKO INSTR & ELECTRONICS 发明人 HATSUTORI YOSHIO
分类号 G11C17/00;G11C11/41;G11C14/00;G11C17/08;G11C17/16 主分类号 G11C17/00
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