| 摘要 |
PURPOSE:To obtain a low-power-consumption and high-speed circuit by providing an insulating film touching a PN junction surface which has no relation to the basic operation of the SIT integrated circuit. CONSTITUTION:On N<->-type epitaxial layer 2 on N<+>-type substrate 1, oxidized films 9 are formed selectively and N<->-type epitaxial layers 2 are also formed. At this time, poly-Si 8 is grown on film 9. Next, the surface is covered with SiO2 7 and a window is made on layer 8 for ion injection, thereby forming P<+>-type layers 3' and 4'. Then, windows are made in film 7 selectively, N<+>-type drain layers are provided through ion injection, and Al wirings 6 are formed. In this constitution, the area of the P<+>N<-> junction at the part which has no relation to the basic operation can be reduced, so that the reduced power consumption and high-speed operation of the SIT integrated circuit can be realized. |
