Semiconductor memory device

摘要

The invention relates to a JFET memory in which the information at the gate electrodes of the JFET's is stored and read-out non-destructively. Each JFET has an IGFET structure situated entirely within the JFET and the gate of which is coupled to the source or drain of the JFET. The information can be refreshed periodically at cell level (that is without external amplifiers) by means of said IGFET.