| 发明名称 |
Microwave InP/SiO{HD 2 {B insulated gate field effect transistor |
| 摘要 |
An InP/SiO2 insulated gate field effect transistor which exhibits power gain at microwave frequencies is manufactured by using an n-type epitaxial semiconducting InP film on a semi-insulating InP substrate and depositing a pyrolytic silicon dioxide insulating film on the conducting InP film to form the gate insulator.
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| 申请公布号 |
US4161739(A) |
申请公布日期 |
1979.07.17 |
| 申请号 |
US19770846070 |
申请日期 |
1977.10.27 |
| 申请人 |
U S OF AMERICA NAVY SECRETARY |
发明人 |
MESSICK, LOUIS J |
| 分类号 |
H01L21/316;H01L29/20;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/316 |
| 代理机构 |
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代理人 |
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